LSF856C1 infrared emitting diode 2.electrical & optical characteristics (ta=25 ) symbol min typ max unit po 7.0 10.0 mw vf 1.4 1.7 v ir 100 a p 850 nm ? 45 nm 25 deg. anode cathode features ? high-output power ? compact ? high reliability applications ? optical switches ? optical sensors 1. absolute maximum ratings (ta=25 ) symbol unit if ma ifp a vr v pd mw topr tstg tj tls *2:time 5 sec max,position:up to 3mm from the body 100 260 lead soldering temp.*2 *1:tw=10us,t=10ms ratings dimensions (unit:mm) 60 0.5 5 100 -20 to 85 -30 to 100 power dissipation operating temp. storage temp. junction temp. i t e m forward current (dc) forward current (pulse)*1 reverse voltage if=20ma if=20ma if=20ma conditions if=20ma if=20ma vr=5v i t e m power output forward voltage reverse current peak wavelength spectral line half width half intensity beam angle thermal derating curve 0 10 20 30 40 50 60 70 80 -30 0 30 60 90 ambient temperature() forward current(ma) forward i-v characteristics 0 10 20 30 40 50 60 0123 forward voltage(v) forward current(ma) spectral output 0 20 40 60 80 100 120 750 850 950 wavelength(nm) relative power output(%) radiation pattern 0 20 40 60 80 100 120 -90 -60 -30 0 30 60 90 beam angle(deg.) relative power output(%) relative power vs forward current 0 50 100 150 200 250 0 102030405060 forward current(ma) relative power output(%) optrans 2009/8/10 to purchase this part contact marktech optoelectronics at 800.984.5337 optoelectronics www.marktechopto.com marktech
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